Fabrication of InAs/AlSb/GaSb heterojunction bipolar transistors on Al2O3 substrates by wafer bonding
Identifieur interne : 010302 ( Main/Repository ); précédent : 010301; suivant : 010303Fabrication of InAs/AlSb/GaSb heterojunction bipolar transistors on Al2O3 substrates by wafer bonding
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Abstract
High-frequency integrated circuit applications of GaSb-based materials are hampered by the lack of a suitable lattice-matched insulating substrate. Wafer bonding was used to fabricate InAs/AlSb/GaSb-based heterojunction bipolar transistors (HBTs) on an insulating sapphire substrate through a low temperature bonding process that results in a high bond strength and permitted the mechanical and chemomechanical removal of the initial GaSb substrate. The use of selective etches allows for the retention of the epitaxial device layers over virtually the entire wafer area. Minimal degradation of the transferred layers occurred in the bonding and substrate removal process. The resulting transferred structures were fabricated into functional HBTs exhibiting a dc current gain of ∼5. © 2001 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Fabrication of InAs/AlSb/GaSb heterojunction bipolar transistors on Al<sub>2</sub>O<sub>3</sub> substrates by wafer bonding</title><author><name sortKey="Moran, P D" uniqKey="Moran P">P. D. Moran</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Chemical Engineering, University of Wisconsin, Madison, Wisconsin 53706</s1><sZ>1 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Wisconsin</region></placeName><wicri:cityArea>Department of Chemical Engineering, University of Wisconsin, Madison</wicri:cityArea></affiliation><affiliation wicri:level="2"><inist:fA14 i1="03"><s1>Department of Chemical Engineering, University of Wisconsin, Madison, Wisconsin 53706</s1></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Wisconsin</region></placeName><wicri:cityArea>Department of Chemical Engineering, University of Wisconsin, Madison</wicri:cityArea></affiliation></author><author><name sortKey="Chow, D" uniqKey="Chow D">D. Chow</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>HRL Laboratories, LLC, Malibu, California 90265</s1><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Californie</region></placeName><wicri:cityArea>HRL Laboratories, LLC, Malibu</wicri:cityArea></affiliation></author><author><name sortKey="Hunter, A" uniqKey="Hunter A">A. Hunter</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>HRL Laboratories, LLC, Malibu, California 90265</s1><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Californie</region></placeName><wicri:cityArea>HRL Laboratories, LLC, Malibu</wicri:cityArea></affiliation></author><author><name sortKey="Kuech, T F" uniqKey="Kuech T">T. F. Kuech</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Chemical Engineering, University of Wisconsin, Madison, Wisconsin 53706</s1><sZ>1 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Wisconsin</region></placeName><wicri:cityArea>Department of Chemical Engineering, University of Wisconsin, Madison</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">01-0172043</idno><date when="2001-04-09">2001-04-09</date><idno type="stanalyst">PASCAL 01-0172043 AIP</idno><idno type="RBID">Pascal:01-0172043</idno><idno type="wicri:Area/Main/Corpus">011622</idno><idno type="wicri:Area/Main/Repository">010302</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium compounds</term><term>Etching</term><term>Experimental study</term><term>Gallium compounds</term><term>Heterojunction bipolar transistors</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Sapphire</term><term>Substrates</term><term>Wafer bonding</term><term>chemical mechanical polishing</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>8530P</term><term>8165C</term><term>Etude expérimentale</term><term>Fixation pastille</term><term>Transistor bipolaire hétérojonction</term><term>Gravure</term><term>Saphir</term><term>Substrat</term><term>Indium composé</term><term>Aluminium composé</term><term>Gallium composé</term><term>Semiconducteur III-V</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">High-frequency integrated circuit applications of GaSb-based materials are hampered by the lack of a suitable lattice-matched insulating substrate. Wafer bonding was used to fabricate InAs/AlSb/GaSb-based heterojunction bipolar transistors (HBTs) on an insulating sapphire substrate through a low temperature bonding process that results in a high bond strength and permitted the mechanical and chemomechanical removal of the initial GaSb substrate. The use of selective etches allows for the retention of the epitaxial device layers over virtually the entire wafer area. Minimal degradation of the transferred layers occurred in the bonding and substrate removal process. The resulting transferred structures were fabricated into functional HBTs exhibiting a dc current gain of ∼5. © 2001 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>78</s2></fA05><fA06><s2>15</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Fabrication of InAs/AlSb/GaSb heterojunction bipolar transistors on Al<sub>2</sub>O<sub>3</sub> substrates by wafer bonding</s1></fA08><fA11 i1="01" i2="1"><s1>MORAN (P. D.)</s1></fA11><fA11 i1="02" i2="1"><s1>CHOW (D.)</s1></fA11><fA11 i1="03" i2="1"><s1>HUNTER (A.)</s1></fA11><fA11 i1="04" i2="1"><s1>KUECH (T. F.)</s1></fA11><fA14 i1="01"><s1>Department of Chemical Engineering, University of Wisconsin, Madison, Wisconsin 53706</s1><sZ>1 aut.</sZ><sZ>4 aut.</sZ></fA14><fA14 i1="02"><s1>HRL Laboratories, LLC, Malibu, California 90265</s1><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA14 i1="03"><s1>Department of Chemical Engineering, University of Wisconsin, Madison, Wisconsin 53706</s1></fA14><fA20><s1>2232-2234</s1></fA20><fA21><s1>2001-04-09</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10020</s2></fA43><fA44><s0>8100</s0><s1>© 2001 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>01-0172043</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied physics letters</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>High-frequency integrated circuit applications of GaSb-based materials are hampered by the lack of a suitable lattice-matched insulating substrate. Wafer bonding was used to fabricate InAs/AlSb/GaSb-based heterojunction bipolar transistors (HBTs) on an insulating sapphire substrate through a low temperature bonding process that results in a high bond strength and permitted the mechanical and chemomechanical removal of the initial GaSb substrate. The use of selective etches allows for the retention of the epitaxial device layers over virtually the entire wafer area. Minimal degradation of the transferred layers occurred in the bonding and substrate removal process. The resulting transferred structures were fabricated into functional HBTs exhibiting a dc current gain of ∼5. © 2001 American Institute of Physics.</s0></fC01><fC02 i1="01" i2="X"><s0>001D03F04</s0></fC02><fC02 i1="02" i2="3"><s0>001B80A65</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>8530P</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="02" i2="3" l="FRE"><s0>8165C</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Etude expérimentale</s0></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Experimental study</s0></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Fixation pastille</s0></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Wafer bonding</s0></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Transistor bipolaire hétérojonction</s0></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Heterojunction bipolar transistors</s0></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Gravure</s0></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Etching</s0></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Saphir</s0></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Sapphire</s0></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Substrat</s0></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Substrates</s0></fC03><fC03 i1="09" i2="3" l="ENG"><s0>chemical mechanical polishing</s0><s4>INC</s4></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Indium composé</s0></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Indium compounds</s0></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Aluminium composé</s0></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Aluminium compounds</s0></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Gallium composé</s0></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Gallium compounds</s0></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Semiconducteur III-V</s0></fC03><fC03 i1="13" i2="3" l="ENG"><s0>III-V semiconductors</s0></fC03><fN21><s1>113</s1></fN21><fN47 i1="01" i2="1"><s0>0115M000292</s0></fN47></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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